Thermal transport across interfaces is an important issue formicroelectronics, photonics, and thermoelectric devices and has been studiedboth experimentally and theoretically in the past. In this paper, thermalinterface resistance (1/G) between aluminum and silicon with nanoscalevacancies was calculated using non-equilibrium molecular dynamics (NEMD). Bothphonon-phonon coupling and electron-phonon coupling are considered incalculations. The results showed that thermal interface resistance increasedlargely due to vacancies. The effect of both the size and the type of vacanciesis studied and compared. And an obvious difference is found for structures withdifferent type/size vacancies.
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